Specifically, the new 512GB eUFS 3.0 flash chip has sequential read and write speeds of 2100MB/s and 410MB/s, respectively. That’s twice as fast as its predecessor; in contrast, the 512GB eUFS 2.0 only has a maximum sequential read and write speed of 860MB/s and 255MB/s, respectively. On a relevant note, even the 1TB eUFS 2.1 found on the new S10+ is only half as fast as the eUFS 3.0 flash chips.
Following the 512GB eUFS 3.0, a 128GB variant will also be launch in the same month. Samsung also plans to produce 1TB and 256GB variants of its eUFS 3.0 later this year. Beyond that little bit of news, the Korean electronics giant did not provide any specific release dates. That said, it’s likely that we could see Samsung devices fitted with the new eUFC 3.0 flash chips sooner, rather than later. (Source: Engadget, Samsung)
